Dr. David L. Harame

A Director at IBM, he is an IBM Fellow, an IEEE Fellow and a senior member of IEEE. He was the first to make SiGe devices using ultra high-vacuum chemical vapor deposition to deposit the SiGe layer and he was the leader of the development of the world's first successful silicon germanium (SiGe) technology generally available for analog and communications circuits used in wireless communications equipment, optical network interfaces,GPS and cellular telephones. The technologies he developed and later installed in IBM's Essex Junction, Vermont manufacturing facility in 1998, set records for the performance of silicon bipolar transistors and is still running in high volume today. Based on his work, SiGe HBTs now exceed frequencies of 390 GHz. This enables products based on existing compound semiconductor technology to be replaced with higher-performance, lower-power and lower-cost SiGe HBT technology commonly used in many products containing high-frequency analog circuits such as cell phones, WLAN, high-speed test and fiber optic applications. He received his education at Stanford University. He is the recipient of the 2010 IEEE BCTM Award and the 2004 IEEE Daniel E. Nobel Award for being the first SiGe Manufacturing Technology. He is the co-author of, ?The Early History of IBM?s SiGe Mixed Signal Technology?, with Bernard S. Meyerson.