Robert (Bob) H. Dennard

Inventor of dynamic random access memory (DRAM), Dennard's creation of the one-transistor dynamic RAM was a core development in the launch of today's computer industry, setting the stage for development of increasingly dense and cost-effective memory for computers. An American electrical engineer and inventor, Robert Dennard was born in Terrell, Texas, U.S. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines.

In 1968, he invented the dynamic random access memory (DRAM). Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 postulated that MOSFETs continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency improve — provided geometric dimensions, voltages, and doping concentrations are consistently scaled to maintain the same electric field. This property underlies the achievement of Moore's Law and the evolution of microelectronics over the last few decades.

He was the recipient of many awards including: the Kyoto Prize (2013); the Carnegie Mellon University Honorary Doctor of Science and Technology (2010); the IEEE Medal of Honor (2009); the IEEE Edison Medal (2001); the Benjamin Franklin Medal in Electrical Engineering from The Franklin Institute (2007); the U.S. National Academy of Engineering (NAE) Charles Stark Draper Prize (2009); the Industrial Research Institute (IRI) Achievement Award; the U.S. National Medal of Technology (1988), presented to him by President Ronald Reagan; and the IEEE Cledo Brunetti Award (1982). Dennard was appointed an IBM Fellow in 1979 and was inducted into the National Inventors Hall of Fame in 1997.