Ferroelectric RAM

Ferroelectric RAM (FeRAM or FRAM[1]) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance[2] and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cycles. Disadvantages of FeRAM are much lower storage densities than Flash devices, storage capacity limitations, and higher cost.